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PolyIC and Thin Film Electronics announce that they have jointly manufactured fully functional re-writable polymer memory products in a high-volume roll-to-roll printing process. [...] InkTec Co., Ltd. (Korea) and Thin Film Electronics ASA (Norway/Sweden) announced fully-functional non-volatile memory devices fabricated using a high-volume roll-to-roll printing process. From the press release: A joint Thinfilm and InkTec project has been successfully completed to demonstrate fully R2R printed memories with a layout and device structure developed by Thinfilm, targeting applications such as game cards [...] Cartamundi, Europe’s largest manufacturer of playing cards and card games, and Thin Film Electronics, developers of printed organic memory devices, have entered into a commercial License Agreement and a joint R&D Program. Cartamundi will use Thinfilm’s patented technology and will now enter into a joint R&D project with the objective to include memory capabilities for the development, [...] Solvay, through their specialty polymer subsidiary Solvay Solexis, and Thin Film Electronics have announced plans to jointly develop materials for printed memory applications. The joint development agreement will build on Thinfilm’s intellectual property for soluble memory materials, as well as extend Solvay’s intellectual property for functional polymer materials. Under the agreement, Solvay Solexis could acquire certain [...] Thin Film Electronics and Xaar have presented the first printed polymer memory device at the IPEX ‘06. From the presentation (available online; 12 MB PDF file): A 100 bit non-volatile re-writable cross-point array memory device was presented, in which all layers were printed. Thin Film Electronics (TFE) are developing low-cost non-volatile memory, consisting of a bistable polymer layer between two arrays of orthogonal addressing lines. This technology provides several advantages compared to conventional, silicon-based memory. As the memory function is a property of the acticve layer, no circuitry is required in the actial memory element. Further, the simple [...] As reported here, Nantero is using carbon nanotubes (CNTs) for a mechanical-switch type non-volatile memory (NRAM). Ribbons of nanotubes are suspended between raised points on a substrate. Applying a voltage to an electrode beneath a CNT bridge, causes the nanotubes to bend downwards until in contact with the substrate. Due to van der Waals [...] |
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