fantastic plastic

Thin Film Electronics (TFE) are developing low-cost non-volatile memory, consisting of a bistable polymer layer between two arrays of orthogonal addressing lines. This technology provides several advantages compared to conventional, silicon-based memory. As the memory function is a property of the acticve layer, no circuitry is required in the actial memory element. Further, the simple architecture allows stacking of multiple layers for greater capacity per unit area. Using printing methods to deposit the solution-based promises low manufacturing costs.

From recent coverage of Printed Electronics USA 05 by IDtechEx (Feb 13, 2006):

Thin Film Electronics of Sweden described how it can print memory on plastic film. It has now demonstrated kilobit level memory but seeks to license not produce and the gigabyte on a postage stamp, with its immense commercial potential, is still elusive.

TFE’s website does not provide a lot of information on the material used for the active layer, but according to some of their patents (US 6,982,895, US 6,937,500, US 6,841,818) a polymeric ferroelectric or electret material, such as PVDF, can be used. A more recently filed patent (US200524343) concerns interlayers (e.g. metal oxides or ternary ceramics) between the electrode(s) and the active polymer layer.

This entry was posted on Wednesday, March 1st, 2006 at 11:32 am and is filed under memory, circuit, printing, flexible/rollable. You can follow any responses to this entry through the RSS 2.0 feed. Responses are currently closed, but you can trackback from your own site.